? semiconductor components industries, llc, 2010 september, 2010 ? rev. 7 1 publication order number: bcp53t1/d bcp53 series pnp silicon epitaxial transistors this pnp silicon epitaxial transistor is designed for use in audio amplifier applications. the device is housed in the sot ? 223 package which is designed for medium power surface mount applications. ? high current: 1.5 a ? npn complement is bcp56 ? the sot ? 223 package can be soldered using wave or reflow. the formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die ? device marking: bcp53t1 = ah bcp53 ? 10t1 = ah ? 10 bcp53 ? 16t1 = ah ? 16 ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit collector ? emitter v oltage v ceo ? 80 vdc collector ? base v oltage v cbo ? 100 vdc emitter ? base voltage v ebo ? 5.0 vdc collector current i c 1.5 adc total power dissipation @ t a = 25 c (note 1.) derate above 25 c p d 1.5 12 watts mw/ c operating and storage temperature range t j , t stg ? 65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient (surface mounted) r ja 83.3 c/w lead temperature for soldering, 0.0625 from case time in solder bath t l 260 10 c s stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. device package shipping ? ordering information sot ? 223 case 318e style 1 medium power high current surface mount pnp transistors collector 2,4 base 1 emitter 3 marking diagram bcp53t1g sot ? 223 (pb ? free) 1000/t ape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd801 1/d. http://onsemi.com bcp53 ? 16t1g sot ? 223 (pb ? free) 1000/t ape & reel bcp53 ? 10t1g sot ? 223 (pb ? free) 1000/t ape & reel bcp53 ? 16t3g sot ? 223 (pb ? free) 4000/t ape & reel 1 a = assembly location y = year w = work week xxxxx = specific device code = pb ? free package ayw xxxxx (note: microdot may be in either location)
bcp53 series http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristics symbol min typ max unit off characteristics collector ? base breakdown voltage (i c = ? 100 adc, i e = 0) v (br)cbo ? 100 ? ? vdc collector ? emitter breakdown voltage (i c = ? 1.0 madc, i b = 0) v (br)ceo ? 80 ? ? vdc collector ? emitter breakdown voltage (i c = ? 100 adc, r be = 1.0 k ) v (br)cer ? 100 ? ? vdc emitter ? base breakdown voltage (i e = ? 10 adc, i c = 0) v (br)ebo ? 5.0 ? ? vdc collector ? base cutoff current (v cb = ? 30 vdc, i e = 0) i cbo ? ? ? 100 nadc emitter ? base cutoff current (v eb = ? 5.0 vdc, i c = 0) i ebo ? ? ? 10 adc on characteristics dc current gain (i c = ? 5.0 madc, v ce = ? 2.0 vdc) all part types (i c = ? 150 madc, v ce = ? 2.0 vdc) bcp53 bcp53 ? 10 bcp53 ? 16 (i c = ? 500 madc, v ce = ? 2.0 vdc) all part types h fe 25 40 63 100 25 ? ? ? ? ? ? 250 160 250 ? ? collector ? emitter saturation voltage (i c = ? 500 madc, i b = ? 50 madc) v ce(sat) ? ? ? 0.5 vdc base ? emitter on voltage (i c = ? 500 madc, v ce = ? 2.0 vdc) v be(on) ? ? ? 1.0 vdc dynamic characteristics current ? gain ? bandwidth product (i c = ? 10 madc, v ce = ? 5.0 vdc, f = 35 mhz) f t ? 50 ? mhz
bcp53 series http://onsemi.com 3 typical characteristics figure 1. collector emitter saturation voltage vs. collector current figure 2. dc current gain vs. collector current (bcp53) i c , collector current (ma) i c , collector current (a) 10 1 0.1 0.01 0.001 0 0.2 0.6 0.8 1.0 1.4 1.8 2.0 figure 3. dc current gain vs. collector current (bcp53 ? 10) figure 4. dc current gain vs. collector current (bcp53 ? 16) i c , collector current (a) i c , collector current (a) figure 5. bcp53, ? 10 base emitter saturation voltage vs. collector current figure 6. bcp53 ? 16 base emitter saturation voltage vs. collector current i c , collector current (a) v ce(sat) , collector emitter saturation voltage (v) h fe , dc current gain h fe , dc current gain h fe , dc current gain v be(sat) , base emitter saturation voltage (v) 0.4 1.2 1.6 ic/ib = 10 bcp53, ? 10, ? 16 +150 c +25 c ? 55 c 10 1 0.1 0.01 0.001 0 20 60 80 100 140 180 200 40 120 160 150 c, 5 v 150 c, 2 v 25 c, 5 v 25 c, 2 v ? 55 c, 5 v ? 55 c, 2 v 10 1 0.1 0.01 0.001 0 20 60 80 100 140 180 40 120 160 150 c, 5 v 150 c, 2 v 25 c, 5 v 25 c, 2 v ? 55 c, 5 v ? 55 c, 2 v 10 1 0.1 0.01 0.001 0 100 150 200 300 50 250 150 c, 5 v 150 c, 2 v 25 c, 5 v 25 c, 2 v ? 55 c, 5 v ? 55 c, 2 v 10 1 0.1 0.01 0.001 0.4 0.6 0.7 0.8 0.9 1.1 1.2 0.5 1.0 ic/ib = 10 bcp53, ? 10 +150 c +25 c ? 55 c i c , collector current (a) v be(sat) , base emitter saturation voltage (v) 10 1 0.1 0.01 0.001 0.4 0.6 0.7 0.8 0.9 1.1 1.2 0.5 1.0 ic/ib = 10 bcp53 ? 16 +150 c +25 c ? 55 c
bcp53 series http://onsemi.com 4 typical characteristics figure 7. bcp53, ? 10 base emitter turn ? on voltage vs. collector current v be(on) figure 8. bcp53 ? 16 base emitter turn ? on voltage vs. collector current i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0.001 0.3 0.4 0.5 0.6 0.7 0.9 1.1 1.2 10 1 0.1 0.01 0.001 0.2 0.5 0.6 0.7 0.8 0.9 1.0 1.2 figure 9. bcp53, ? 10, ? 16 saturation region figure 10. input capacitance i b , base current (a) voltage (v) 1 0.1 0.01 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 1.0 5 4 3 2 1 0 40 50 60 70 80 90 100 110 figure 11. output capacitance figure 12. standard operating area voltage (v) vce, collector emitter voltage (v) 20 14 10 8 6 4 2 0 0 5 10 15 20 25 100 10 1 0.1 0.01 0.1 1 10 v be(on) , base emitter turn ? on voltage (v) v be(sat) , base emitter saturation voltage (v) v ce , collector ? emitter voltage (v) capacitance (pf) capacitance (pf) ic, collector current (a) 0.8 1.0 1.1 vce = 2 v bcp53, ? 10 +150 c +25 c ? 55 c vce = 2 v bcp53 ? 16 +150 c +25 c ? 55 c 0.7 0.8 0.9 bcp53, ? 10, ? 16 ic = 100 ma ic = 500 ma ic = 1.5 a ic = 1.0 a bcp53 ? 10 bcp53 bcp53 ? 16 12 16 18 bcp53 ? 10 bcp53 bcp53 ? 16 single pulse test at t amb = 25 c continuous thermal limit 100 ms 10 ms 1 ms 1 s 0.4 0.3
bcp53 series http://onsemi.com 5 package dimensions sot ? 223 (to ? 261) case 318e ? 04 issue n style 1: pin 1. base 2. collector 3. emitter 4. collector a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint* h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 l l 0.20 ??? ??? 0.008 ??? ??? *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting t echniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. sc illc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems in tended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hol d scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding th e design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resa le in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 bcp53t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc a sales representative
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